dec2011.version1.0 magnachipsemiconductorltd . 1 mdp1850b/mdf18n50bnchannelmosfet500v absolutemaximumratings(ta=25 o c) characteristics symbol mdp18n50b mdf18n50b unit drainsourcevoltage v dss 500 v gatesourcevoltage v gss 30 v continuousdraincurrent t c =25 o c i d 18 18* a t c =100 o c 11 11* a pulseddraincurrent (1) i dm 72 72* a powerdissipation t c =25 o c p d 236 37 w derateabove25 o c 1.89 0.29 w/ o c repetitiveavalancheenergy (1) e ar 23.6 mj peakdioderecoverydv/dt (3) dv/dt 4.5 v/ns singlepulseavalancheenergy (4) e as 950 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c idlimitedbymaximumjunctiontemperature thermalcharacteristics characteristics symbol mdp18n50b mdf18n50b unit thermalresistance,junctiontoambient (1) r ja 62.5 62.5 o c/w thermalresistance,junctiontocase (1) r jc 0.53 3.4 mdp18n50 b/mdf18n50b nchannelmosfet500v,18.0a,0.27 generaldescription themdp/f18n50busesadvancedmagnachip s mosfettechnology,whichprovideslowonstate resistance,highswitchingperformanceand excellentquality. mdp/f18n50bissuitabledeviceforsmps,hid andgeneralpurposeapplications. features v ds =500v i d =18.0a @v gs =10v r ds(on) 0.27 @v gs =10v applications powersupply pfc ballast
dec2011.version1.0 magnachipsemiconductorltd . 2 mdp1850b/mdf18n50bnchannelmosfet500v orderinginformation partnumber temp.range package packing rohsstatus mdp18n50bth 55~150 o c to220 tube halogenfree MDF18N50BTH 55~150 o c to220f tube halogenfree electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 500 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 2.0 4.0 draincutoffcurrent i dss v ds =500v,v gs =0v 1 a gateleakagecurrent i gss v gs =30v,v ds =0v 100 na drainsourceonresistance r ds(on) v gs =10v,i d =9a 0.22 0.27 forwardtransconductance g fs v ds =40v,i d =9a 13 s dynamiccharacteristics totalgatecharge q g v ds =400v,i d =18.0a,v gs =10v (3) 48 nc gatesourcecharge q gs 10 gatedraincharge q gd 15 inputcapacitance c iss v ds =25v,v gs =0v,f=1.0mhz 2490 pf reversetransfercapacitance c rss 13 outputcapacitance c oss 307 turnon delaytime t d(on) v gs =10v,v ds =250v,i d =18.0a, r g =25 (3) 32 ns risetime t r 82 turnoffdelaytime t d(off) 222 falltime t f 75 drainsourcebodydiodecharacteristics maximumcontinuousdraintosource diodeforwardcurrent i s 18 a sourcedraindiodeforwardvoltage v sd i s =18.0a,v gs =0v 1.4 v bodydiodereverserecoverytime t rr i f =18.0a,dl/dt=100a/s (3) 375 ns bodydiodereverserecoverycharge q rr 4.2 c note: 1.pulsewidthisbasedonr jc &r ja andthemaximumallowedjunctiontemperatureof150c. 2.pulsetest:pulsewidth300us,dutycycle2%,pulse widthlimitedbyjunctiontemperaturet j(max) =150c. 3.i sd 18.0a,di/dt200a/us, v dd bv dss , r g =25,startingt j =25c 4.l=5.3mh,i as =18.0a,v dd =50v,,r g =25,startingt j =25c
dec2011.version1.0 magnachipsemiconductorltd . 3 mdp1850b/mdf18n50bnchannelmosfet500v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2onresistancevariationwith draincurrentandgatevoltage fig.3onresistancevariationwith temperature fig.4 breakdown voltage variation vs. temperature fig.6 body diode forward voltage variation with source current and temperature 50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250 ? bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] 50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1.v gs =10v 2.i d =5.0a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 2 3 4 5 6 7 8 0.1 1 10 100 55 25 150 *notes; 1.vds=30v i d (a ) v gs [v] 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 150 notes: 1.v gs =0v 2.250 spulsetest i dr reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 0 5 10 15 20 25 0 5 10 15 20 25 30 35 notes 1.250? pulsetest 2.t c =25? v gs =5.0v =5.5v =6.0v =7.0v =8.0v =10.0v =15.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 10 15 20 25 30 35 40 45 50 55 0.3 0.4 0.5 0.6 v gs =10.0v v gs =20v r d s (o n ) [ ] i d ,draincurrent[a]
dec2011.version1.0 magnachipsemiconductorltd . 4 mdp1850b/mdf18n50bnchannelmosfet500v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea mdp18n50b(to220) fig.10 maximum drain current vs. case temperature fig.11transientthermalresponsecurve mdp18n50b(to220) fig.12 single pulse maximum power dissipation C mdp18n50b(to220) 0 10 20 30 40 50 0 2 4 6 8 10 400v 250v 100v note:i d =18.0a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 1 10 0 1000 2000 3000 4000 5000 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =0.53 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec] 1e5 1e4 1e3 0.01 0.1 1 0 3000 6000 9000 12000 15000 18000 21000 24000 27000 30000 singlepulse r thjc =0.53 /w t c =25 power(w) pulsewidth(s) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 i d ,draincurrent[a] t c ,casetemperature[ ]
dec2011.version1.0 magnachipsemiconductorltd . 5 mdp1850b/mdf18n50bnchannelmosfet500v fig.13maximumsafeoperatingarea mdf13n50b(to220f) fig.14 single pulse maximum power dissipation C mdf13n50b(to220f) fig.15transientthermalresponsecurve mdf13n50b(to220f) 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 1e5 1e4 1e3 0.01 0.1 1 0 3000 6000 9000 12000 singlepulse r thjc =3.4 /w t c =25 power(w) pulsewidth(s) 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 10 1 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =3.4 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec]
dec2011.version1.0 magnachipsemiconductorltd . 6 mdp1850b/mdf18n50bnchannelmosfet500v physicaldimensions 3leads,to220 dimensionsareinmillimetersunlessotherwisespec ified
dec2011.version1.0 magnachipsemiconductorltd . 7 mdp1850b/mdf18n50bnchannelmosfet500v physicaldimension 3leads,to220f dimensionsareinmillimetersunlessotherwisespec ified symbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q1 3.10 3.50 r 3.00 3.55
dec2011.version1.0 magnachipsemiconductorltd . 8 mdp1850b/mdf18n50bnchannelmosfet500v worldwidesalessupportlocations u.s.a sunnyvaleoffice 787n.maryave.sunnyvale ca94085u.s.a tel:14086365200 fax:14082132450 email:usasales@magnachip.com u.k knyvetthousethecauseway, stainesmiddx,tw183ba,u.k. tel:+44(0)1784895000 fax:+44(0)1784895115 email:uksales@magnachip.com japan osakaoffice 3f,shinosakamt2bldg3536 miyaharayodogawaku osaka,5320003japan tel:81663949160 fax:81663949150 email:osakasales@magnachip.com taiwanr.o.c 2f,no.61,chowizestreet,neihu taipei,114taiwanr.o.c tel:886226577898 fax:886226578751 email:taiwansales@magnachip.com china hongkongoffice suite1024,oceancentre5cantonroad, tsimshatsuikowloon,hongkong tel:85228289700 fax:85228028183 email:chinasales@magnachip.com shenzhenoffice room2003b,20/f internationalchamberofcommercetower fuhuaroad3cbd,futiandistrict,china tel:8675588315561 fax:8675588315565 email:chinasales@magnachip.com shanghaioffice roome,8/f,liaosheninternationalbuilding1068 wuzhongroad,(c)201103 shanghai,china tel:862164051521 fax:862165051523 email:chinasales@magnachip.com korea 891,daechidong,kangnamgu seoul,135738korea tel:82269033451 fax:82269033668~9 email:koreasales@magnachip.com disclaimer: theproductsarenotdesignedforuseinhostileenvironm ents,including,withoutlimitation,aircraft,nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers custome rs using or selling sellers products for use in such applicationsdosoattheirownriskandagreetofully defendandindemnifyseller. \ magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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